Autor segons l'article: Serres, J M; Loiko, P; Mateos, X; Jambunathan, V; Yasukevich, A S; Yumashev, K V; Petrov, V; Griebner, U; Aguilo, M; Diaz, F
Departament: Química Física i Inorgànica
Autor/s de la URV: Aguiló Díaz, Magdalena / Díaz González, Francisco Manuel / Mateos Ferré, Xavier / Serres Serres, Josep Maria
Paraules clau: Tm Spectroscopy Pumped continuous-wave Operation Lasers, q-switched Laser materials Infrared and far-infrared lasers Growth Energy Diode Co-doped (ho
Resum: A diode-pumped Tm,Ho:KLu (WO4)(2) microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns/9 mu J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns/10.4 mu J/8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results. (C) 2016 Optical Society of America
Àrees temàtiques: Química Optics Odontología Medicina iii Medicina ii Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências Engineering (miscellaneous) Engenharias iv Engenharias iii Engenharias ii Electrical and electronic engineering Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: josepmaria.serres@urv.cat magdalena.aguilo@urv.cat xavier.mateos@urv.cat f.diaz@urv.cat
Identificador de l'autor: 0000-0002-4299-538X 0000-0001-6130-9579 0000-0003-1940-1990 0000-0003-4581-4967
Data d'alta del registre: 2024-10-19
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://opg.optica.org/ao/abstract.cfm?uri=ao-55-14-3757
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Applied Optics. 55 (14): 3757-3763
Referència de l'ítem segons les normes APA: Serres, J M; Loiko, P; Mateos, X; Jambunathan, V; Yasukevich, A S; Yumashev, K V; Petrov, V; Griebner, U; Aguilo, M; Diaz, F (2016). Passive Q-switching of a Tm,Ho:KLu(WO4)(2) microchip laser by a Cr:ZnS saturable absorber. Applied Optics, 55(14), 3757-3763. DOI: 10.1364/AO.55.003757
DOI de l'article: 10.1364/AO.55.003757
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2016
Tipus de publicació: Journal Publications
Repositori URV