Autor según el artículo: Serres, J M; Loiko, P; Mateos, X; Jambunathan, V; Yasukevich, A S; Yumashev, K V; Petrov, V; Griebner, U; Aguilo, M; Diaz, F
Departamento: Química Física i Inorgànica
Autor/es de la URV: Aguiló Díaz, Magdalena / Díaz González, Francisco Manuel / Mateos Ferré, Xavier / Serres Serres, Josep Maria
Palabras clave: Tm Spectroscopy Pumped continuous-wave Operation Lasers, q-switched Laser materials Infrared and far-infrared lasers Growth Energy Diode Co-doped (ho
Resumen: A diode-pumped Tm,Ho:KLu (WO4)(2) microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns/9 mu J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns/10.4 mu J/8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results. (C) 2016 Optical Society of America
Áreas temáticas: Química Optics Odontología Medicina iii Medicina ii Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências Engineering (miscellaneous) Engenharias iv Engenharias iii Engenharias ii Electrical and electronic engineering Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: josepmaria.serres@urv.cat magdalena.aguilo@urv.cat xavier.mateos@urv.cat f.diaz@urv.cat
Identificador del autor: 0000-0002-4299-538X 0000-0001-6130-9579 0000-0003-1940-1990 0000-0003-4581-4967
Fecha de alta del registro: 2024-10-19
Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
Enlace a la fuente original: https://opg.optica.org/ao/abstract.cfm?uri=ao-55-14-3757
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Applied Optics. 55 (14): 3757-3763
Referencia de l'ítem segons les normes APA: Serres, J M; Loiko, P; Mateos, X; Jambunathan, V; Yasukevich, A S; Yumashev, K V; Petrov, V; Griebner, U; Aguilo, M; Diaz, F (2016). Passive Q-switching of a Tm,Ho:KLu(WO4)(2) microchip laser by a Cr:ZnS saturable absorber. Applied Optics, 55(14), 3757-3763. DOI: 10.1364/AO.55.003757
DOI del artículo: 10.1364/AO.55.003757
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2016
Tipo de publicación: Journal Publications
Repositori URV