Autor segons l'article: Lime, F; Iniguez, B; Kloes, A
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin / Lime, François Gilbert Marie
Paraules clau: Soi Mosfets Fringing fields
Resum: This paper presents a new conformal mapping method to solve 2D Laplace and Poisson equations in MOS devices. More specifically, it consists of an analytical solution of the 2D Laplace equation in a rectangular domain with Dirichlet boundary conditions, with arbitrary values on the boundaries. The advantages of the new method are that all four edges of the rectangle are taken into account and the solution consists of closed-form analytical expressions, which make it fast and suitable for compact modeling. The new model was validated against other similar methods. It was found that the new model is much faster, easier to implement, and avoids many numerical issues, especially near the boundaries, at the cost of a very small loss in accuracy.
Àrees temàtiques: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Condensed matter physics Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física Antropologia / arqueologia
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: francois.lime@urv.cat benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-1024-6480 0000-0002-6504-7980
Data d'alta del registre: 2024-08-03
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Journal Of Applied Physics. 135 (4): 044501-
Referència de l'ítem segons les normes APA: Lime, F; Iniguez, B; Kloes, A (2024). A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling. Journal Of Applied Physics, 135(4), 044501-. DOI: 10.1063/5.0188863
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2024
Tipus de publicació: Journal Publications
Repositori URV