Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling

  • Datos identificativos

    Identificador: imarina:9366237
    Autores:
    Lime, FIniguez, BKloes, A
    Resumen:
    This paper presents a new conformal mapping method to solve 2D Laplace and Poisson equations in MOS devices. More specifically, it consists of an analytical solution of the 2D Laplace equation in a rectangular domain with Dirichlet boundary conditions, with arbitrary values on the boundaries. The advantages of the new method are that all four edges of the rectangle are taken into account and the solution consists of closed-form analytical expressions, which make it fast and suitable for compact modeling. The new model was validated against other similar methods. It was found that the new model is much faster, easier to implement, and avoids many numerical issues, especially near the boundaries, at the cost of a very small loss in accuracy.
  • Otros:

    Autor según el artículo: Lime, F; Iniguez, B; Kloes, A
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Iñiguez Nicolau, Benjamin / Lime, François Gilbert Marie
    Palabras clave: Soi Mosfets Fringing fields
    Resumen: This paper presents a new conformal mapping method to solve 2D Laplace and Poisson equations in MOS devices. More specifically, it consists of an analytical solution of the 2D Laplace equation in a rectangular domain with Dirichlet boundary conditions, with arbitrary values on the boundaries. The advantages of the new method are that all four edges of the rectangle are taken into account and the solution consists of closed-form analytical expressions, which make it fast and suitable for compact modeling. The new model was validated against other similar methods. It was found that the new model is much faster, easier to implement, and avoids many numerical issues, especially near the boundaries, at the cost of a very small loss in accuracy.
    Áreas temáticas: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Condensed matter physics Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física Antropologia / arqueologia
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: francois.lime@urv.cat benjamin.iniguez@urv.cat
    Identificador del autor: 0000-0002-1024-6480 0000-0002-6504-7980
    Fecha de alta del registro: 2024-08-03
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Enlace a la fuente original: https://pubs.aip.org/aip/jap/article/135/4/044501/3061422/A-new-analytical-method-for-modeling-a-2D
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referencia al articulo segun fuente origial: Journal Of Applied Physics. 135 (4): 044501-
    Referencia de l'ítem segons les normes APA: Lime, F; Iniguez, B; Kloes, A (2024). A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling. Journal Of Applied Physics, 135(4), 044501-. DOI: 10.1063/5.0188863
    DOI del artículo: 10.1063/5.0188863
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2024
    Tipo de publicación: Journal Publications
  • Palabras clave:

    Atomic and Molecular Physics, and Optics,Condensed Matter Physics,Physics and Astronomy (Miscellaneous),Physics, Applied
    Soi
    Mosfets
    Fringing fields
    Química
    Physics, applied
    Physics and astronomy (miscellaneous)
    Physics and astronomy (all)
    Odontología
    Medicina iii
    Medicina ii
    Medicina i
    Materiais
    Matemática / probabilidade e estatística
    Interdisciplinar
    Geociências
    General physics and astronomy
    Farmacia
    Ensino
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Engenharias i
    Condensed matter physics
    Ciências biológicas iii
    Ciências biológicas i
    Ciências ambientais
    Ciências agrárias i
    Ciência da computação
    Biotecnología
    Biodiversidade
    Atomic and molecular physics, and optics
    Astronomia / física
    Antropologia / arqueologia
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