Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design

  • Dades identificatives

    Identificador:  imarina:9407080
    Autors:  Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B
    Resum:
    There is increasing interest in using specialized circuits based on emerging technologies to develop a new generation of smart devices. The process and device variability exhibited by such materials, however, can present substantial challenges for designing circuits. Three models are considered here: a physical compact model, an empirical look-up table, and an empirical surrogate model based on a multilayer perceptron (MLP) regression. Each one is fit to measurements of discrete organic thin film transistors in the low voltage regime. It is shown that the models provide consistent results when designing artificial neuron circuits, but that the MLP regression provides the highest accuracy and is much simpler to fit compared to the compact model. The targeted technology exhibits non-ideal behavior such as variable threshold voltage and hysteresis. Using the MLP regression model, the effect of such variability on the performance of an artificial neuron circuit is compared. It is found that these effects alter the neuron firing rate and change the time spent in the on/off states but do not change the basic operation.
  • Altres:

    Enllaç font original: https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400515
    Referència de l'ítem segons les normes APA: Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B (2024). Simulating Organic Thin Film Transistors Using Multilayer Perceptron Regression Models to Enable Circuit Design. Advanced Electronic Materials, 10(12), -. DOI: 10.1002/aelm.202400515
    Referència a l'article segons font original: Advanced Electronic Materials. 10 (12):
    DOI de l'article: 10.1002/aelm.202400515
    Any de publicació de la revista: 2024-12-05
    Entitat: Universitat Rovira i Virgili
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Data d'alta del registre: 2026-05-09
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipus de publicació: Journal Publications
    Autor segons l'article: Calvet, LE; El-Nakouzi, S; Li, ZL; Kim, Y; Zaibi, A; Golec, P; Bhattacharyya, IM; Bonnassieux, Y; Kadura, L; Iñiguez, B
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Àrees temàtiques: Physics, applied, Nanoscience & nanotechnology, Materials science, multidisciplinary, Electronic, optical and magnetic materials, Astronomia / física
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
  • Paraules clau:

    Organic electronics
    Organic electronic
    Device modelling
    Circuit simulations
    Artificial neuron circuits
    Electronic
    Optical and Magnetic Materials
    Materials Science
    Multidisciplinary
    Nanoscience & Nanotechnology
    Physics
    Applied
    Astronomia / física
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