Autor segons l'article: Dersch, Nadine; Perez, Eduardo; Wenger, Christian; Schwarz, Mike; Iniguez, Benjamin; Kloes, Alexander
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Closed-form; Modeling; Oxide-based; Pulse-programming; Resistive random access memory; Stanford model; Variability
Resum: This paper presents a closed-form model for pulse-based programming of oxide-based resistive random access memory devices. The Stanford model is used as a basis and solved in a closed-form for the programming cycle. A constant temperature is set for this solution. With the closed-form model, the state of the device after programming or the required programming settings for achieving a specific device conductance can be calculated directly and quickly. The Stanford model requires time-consuming iterative calculations for high accuracy in transient analysis, which is not necessary for the closed-form model. The closed-form model is scalable across different programming pulse widths and voltages.
Àrees temàtiques: Astronomia / física; Ciências agrárias i; Condensed matter physics; Electrical and electronic engineering; Electronic, optical and magnetic materials; Engenharias iv; Engineering, electrical & electronic; Materiais; Materials chemistry; Physics, applied; Physics, condensed matter
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Data d'alta del registre: 2025-09-27
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://www.sciencedirect.com/science/article/pii/S0038110125001832?via%3Dihub
Referència a l'article segons font original: Solid-State Electronics. 230 109238-
Referència de l'ítem segons les normes APA: Dersch, Nadine; Perez, Eduardo; Wenger, Christian; Schwarz, Mike; Iniguez, Benjamin; Kloes, Alexander (2025). A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model. Solid-State Electronics, 230(), 109238-. DOI: 10.1016/j.sse.2025.109238
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.1016/j.sse.2025.109238
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2025
Tipus de publicació: Journal Publications
Repositori URV