A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model

Identifier:  imarina:9465560

Handle: https://hdl.handle.net/20.500.11797/imarina9465560

Authors:  Dersch, Nadine; Perez, Eduardo; Wenger, Christian; Schwarz, Mike; Iniguez, Benjamin; Kloes, Alexander

Abstract:
This paper presents a closed-form model for pulse-based programming of oxide-based resistive random access memory devices. The Stanford model is used as a basis and solved in a closed-form for the programming cycle. A constant temperature is set for this solution. With the closed-form model, the state of the device after programming or the required programming settings for achieving a specific device conductance can be calculated directly and quickly. The Stanford model requires time-consuming iterative calculations for high accuracy in transient analysis, which is not necessary for the closed-form model. The closed-form model is scalable across different programming pulse widths and voltages.