Indium-modified Yb:KLu(WO4)2 crystal: Growth, spectroscopy and laser operation

Identifier:  PC:2470

Handle: https://hdl.handle.net/20.500.11797/PC2470

Authors:  X. Mateos; J.M. Serres; P. Loiko; U. Griebner; V. Petrov; K. Yumashev; M. Aguiló; F. Díaz

Abstract:
We report on the growth, spectroscopic and laser characterization of a novel monoclinic laser crystal, Yb,In:KLu(WO4)2 (Yb,In:KLuW). The absorption, stimulated-emission and gain cross-section spectra of 3.5 at% Yb, 5.5 at% In-doped KLuW are determined at room temperature with polarized light and compared with those for Yb,In:KYW, as well as singly Yb-doped KLuW and KYW crystals. It is found that the introduction of In results in a decrease of the transition cross-sections and in a spectral broadening of the absorption and emission bands. Such a broadening is more pronounced for light polarization E ||Np. For Yb,In:KLuW, the maximum σabs is 9.9×10–20 cm2 at 980.9 nm for E ||Nm and the corresponding bandwidth of the absorption peak is 3.7 nm. The radiative lifetime for Yb3+ ions is 237±5 µs. The stimulated-emission cross-sections are σSE(m)=2.4×10–20 cm2 at 1022.4 nm and σSE(p)=1.3×10–20 cm2 at 1039.1 nm corresponding to an emission bandwidth of >30 nm and >35 nm, respectively. The diode-pumped Ng-cut Yb,In:KLuW microchip laser generated 4.11 W at 1042–1048 nm with a slope efficiency of 78%. The Yb,In:KLuW crystal is very promising for the generation of sub-100 fs pulses in mode-locked lasers due to its broadband emission characteristics.