Articles producció científica> Química Física i Inorgànica

Semiconductor saturable absorber Q-switching of a holmium micro-laser

  • Identification data

    Identifier: imarina:9293200
    Authors:
    Lan, RuijunMateos, XavierWang, YichengMaria Serres, JosepLoiko, PavelLi, JiangPan, YubaiGriebner, UwePetrov, Valentin
    Abstract:
    We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 mu J pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates. (c) 2017 Optical Society of America
  • Others:

    Author, as appears in the article.: Lan, Ruijun; Mateos, Xavier; Wang, Yicheng; Maria Serres, Josep; Loiko, Pavel; Li, Jiang; Pan, Yubai; Griebner, Uwe; Petrov, Valentin;
    Department: Química Física i Inorgànica
    URV's Author/s: Mateos Ferré, Xavier / Serres Serres, Josep Maria
    Keywords: Saturable absorbers Q switching Power Mode-locking Holmium Ceramic laser
    Abstract: We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 mu J pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates. (c) 2017 Optical Society of America
    Thematic Areas: Química Optics Odontología Medicina iii Medicina ii Materiais Matemática / probabilidade e estatística Interdisciplinar Engenharias iv Engenharias iii Engenharias ii Ciências biológicas i Ciências agrárias i Ciência da computação Biotecnología Atomic and molecular physics, and optics Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: josepmaria.serres@urv.cat xavier.mateos@urv.cat
    Author identifier: 0000-0002-4299-538X 0000-0003-1940-1990
    Record's date: 2024-09-07
    Papper version: info:eu-repo/semantics/publishedVersion
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Optics Express. 25 (5): 4579-4584
    APA: Lan, Ruijun; Mateos, Xavier; Wang, Yicheng; Maria Serres, Josep; Loiko, Pavel; Li, Jiang; Pan, Yubai; Griebner, Uwe; Petrov, Valentin; (2017). Semiconductor saturable absorber Q-switching of a holmium micro-laser. Optics Express, 25(5), 4579-4584. DOI: 10.1364/OE.25.004579
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2017
    Publication Type: Journal Publications
  • Keywords:

    Atomic and Molecular Physics, and Optics,Optics
    Saturable absorbers
    Q switching
    Power
    Mode-locking
    Holmium
    Ceramic laser
    Química
    Optics
    Odontología
    Medicina iii
    Medicina ii
    Materiais
    Matemática / probabilidade e estatística
    Interdisciplinar
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Ciências biológicas i
    Ciências agrárias i
    Ciência da computação
    Biotecnología
    Atomic and molecular physics, and optics
    Astronomia / física
  • Documents:

  • Cerca a google

    Search to google scholar