Articles producció científica> Química Física i Inorgànica

Semiconductor saturable absorber Q-switching of a holmium micro-laser

  • Datos identificativos

    Identificador: imarina:9293200
    Autores:
    Lan, RuijunMateos, XavierWang, YichengMaria Serres, JosepLoiko, PavelLi, JiangPan, YubaiGriebner, UwePetrov, Valentin
    Resumen:
    We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 mu J pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates. (c) 2017 Optical Society of America
  • Otros:

    Autor según el artículo: Lan, Ruijun; Mateos, Xavier; Wang, Yicheng; Maria Serres, Josep; Loiko, Pavel; Li, Jiang; Pan, Yubai; Griebner, Uwe; Petrov, Valentin;
    Departamento: Química Física i Inorgànica
    Autor/es de la URV: Mateos Ferré, Xavier / Serres Serres, Josep Maria
    Palabras clave: Saturable absorbers Q switching Power Mode-locking Holmium Ceramic laser
    Resumen: We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 mu J pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates. (c) 2017 Optical Society of America
    Áreas temáticas: Química Optics Odontología Medicina iii Medicina ii Materiais Matemática / probabilidade e estatística Interdisciplinar Engenharias iv Engenharias iii Engenharias ii Ciências biológicas i Ciências agrárias i Ciência da computação Biotecnología Atomic and molecular physics, and optics Astronomia / física
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: josepmaria.serres@urv.cat xavier.mateos@urv.cat
    Identificador del autor: 0000-0002-4299-538X 0000-0003-1940-1990
    Fecha de alta del registro: 2024-09-07
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referencia al articulo segun fuente origial: Optics Express. 25 (5): 4579-4584
    Referencia de l'ítem segons les normes APA: Lan, Ruijun; Mateos, Xavier; Wang, Yicheng; Maria Serres, Josep; Loiko, Pavel; Li, Jiang; Pan, Yubai; Griebner, Uwe; Petrov, Valentin; (2017). Semiconductor saturable absorber Q-switching of a holmium micro-laser. Optics Express, 25(5), 4579-4584. DOI: 10.1364/OE.25.004579
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2017
    Tipo de publicación: Journal Publications
  • Palabras clave:

    Atomic and Molecular Physics, and Optics,Optics
    Saturable absorbers
    Q switching
    Power
    Mode-locking
    Holmium
    Ceramic laser
    Química
    Optics
    Odontología
    Medicina iii
    Medicina ii
    Materiais
    Matemática / probabilidade e estatística
    Interdisciplinar
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Ciências biológicas i
    Ciências agrárias i
    Ciência da computação
    Biotecnología
    Atomic and molecular physics, and optics
    Astronomia / física
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