Semiconductor saturable absorber Q-switching of a holmium micro-laser

Identificador:  imarina:9293200

Handle: https://hdl.handle.net/20.500.11797/imarina9293200

Autores:  Lan, RJ; Mateos, X; Wang, YC; Serres, JM; Loiko, P; Li, J; Pan, YB; Griebner, U; Petrov, V

Resumen:
We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 mu J pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates. (c) 2017 Optical Society of America