The Schottky barrier transistor in emerging electronic devices

Identifier:  imarina:9296513

Handle: https://hdl.handle.net/20.500.11797/imarina9296513

Authors:  Schwarz M; Vethaak TD; Derycke V; Francheteau A; Iniguez B; Kataria S; Kloes A; Lefloch F; Lemme M; Snyder JP; Weber WM; Calvet LE

Abstract:
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable FETs for sensors, neuromorphic hardware and security applications. Similarly, judicious use of a SB can be an asset for applications involving Josephson junction FETs.Creative Commons Attribution license.