Author, as appears in the article.: Schwarz M; Vethaak TD; Derycke V; Francheteau A; Iniguez B; Kataria S; Kloes A; Lefloch F; Lemme M; Snyder JP; Weber WM; Calvet LE
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin
Keywords: 1d materials 2-dimensional materials 2d materials andreev reflection carbon-nanotube transistors contact resistance effective richardson constant field effect transistors field-effect transistors josephson junctions silicon-nanowire transistors source-gated transistors thin film transistors transport-properties 1d materials 2d materials Field effect transistors Josephson junctions Schottky barriers Source-gated transistors Thin film transistors Thin-film transistors
Abstract: This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable FETs for sensors, neuromorphic hardware and security applications. Similarly, judicious use of a SB can be an asset for applications involving Josephson junction FETs.Creative Commons Attribution license.
Thematic Areas: Antropologia / arqueologia Astronomia / física Bioengineering Biotecnología Chemistry (all) Chemistry (miscellaneous) Ciências agrárias i Ciências biológicas i Ciências biológicas ii Ciências biológicas iii Electrical and electronic engineering Engenharias i Engenharias ii Engenharias iii Engenharias iv Engineering Engineering, multidisciplinary Ensino Farmacia General chemistry General materials science General medicine Interdisciplinar Matemática / probabilidade e estatística Materiais Materials science Materials science (all) Materials science (miscellaneous) Materials science, multidisciplinary Mechanical engineering Mechanics of materials Medicina i Medicina ii Medicina veterinaria Nanoscience & nanotechnology Nanoscience and nanotechnology Odontología Physics, applied Química
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2025-02-19
Paper version: info:eu-repo/semantics/publishedVersion
Paper original source: Nanotechnology. 34 (35):
APA: Schwarz M; Vethaak TD; Derycke V; Francheteau A; Iniguez B; Kataria S; Kloes A; Lefloch F; Lemme M; Snyder JP; Weber WM; Calvet LE (2023). The Schottky barrier transistor in emerging electronic devices. Nanotechnology, 34(35), -. DOI: 10.1088/1361-6528/acd05f
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Entity: Universitat Rovira i Virgili
Journal publication year: 2023
Publication Type: Journal Publications
Repositori URV