Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS

  • Identification data

    Identifier:  imarina:9414850
    Handle: https://hdl.handle.net/20.500.11797/imarina9414850
    Authors:  Broche, Anisleidy; Cerdeira, Antonio; Iniguez, Benjamin; Estrada, Magali
    Abstract:
    The behaviour of MoS2 FETs, with channel lengths greater than the mean free path of carriers was analysed. Electrical behaviour of experimental devices with channel lengths of 5 mu m and 0.1 mu m was studied, modelled and simulated, concluding that the predominant transport mechanism observed was hopping. The presence of a localized density of states (DOS) distribution in the semiconductor layer, causing the behaviour observed in these devices, was studied and determined by both modelling and simulation.

  • Others:

    Link to the original source: https://doiserbia.nb.rs/Article.aspx?ID=0353-36702404609B
    APA: Broche, Anisleidy; Cerdeira, Antonio; Iniguez, Benjamin; Estrada, Magali (2024). DETERMING THE CHARACTERISTICS OF THE LOCALIZED DENSITY OF STATES DISTRIBUTION PRESENT IN MOS2 2D FETS. Facta Universitatis (Nis), Series: Electronics And Energetics, 37(4), 609-617. DOI: 10.2298/FUEE2404609B
    Paper original source: Facta Universitatis (Nis), Series: Electronics And Energetics. 37 (4): 609-617
    Article's DOI: 10.2298/FUEE2404609B
    Journal publication year: 2024
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/publishedVersion
    Record's date: 2025-02-08
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Journal Publications
    Author, as appears in the article.: Broche, Anisleidy; Cerdeira, Antonio; Iniguez, Benjamin; Estrada, Magali
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Thematic Areas: Engineering, electrical & electronic
    Author's mail: benjamin.iniguez@urv.cat

  • Keywords:

    Dos in mos2 2d fet
    Mobility of mos2 2d fets
    Mos2 2d fet modelling and simulatio
    Mos2 2d fet modelling and simulation
    Engineering
    Electrical & Electronic

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