Autor según el artículo: Carvajal, J. J. ; Mena, J. ; Aixart, J. ; O'Dwyer, C. ; Díaz, F.; Aguió, M.

Departamento: Química Física i Inorgànica

Autor/es de la URV: CARVAJAL MARTÍ, JOAN JOSEP; Mena, J. ; Aixart, J. ; O'Dwyer, C. ; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA

Palabras clave: MOS Diodes LED GaN

Resumen: Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1¿±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ¿13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.

Grupo de investigación: Física i Cristal.lografia de Materials Física i Cristal·lografia de Nanomaterials

Áreas temáticas: Química Química Chemistry

Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 2162-8769

Identificador del autor: 0000-0002-4389-7298; ; ; ; 0000-0003-4581-4967; 0000-0001-6130-9579

Fecha de alta del registro: 2018-06-04

Página final: 148

Volumen de revista: 6

Versión del articulo depositado: info:eu-repo/semantics/submittedVersion

Enlace a la fuente original: https://iopscience.iop.org/article/10.1149/2.0041710jss

Programa de financiación: plan; Retos; TEC2014-55948-R plan; Retos; Mineco/AEI/FEDER MAT2016-75716-C2-1-R altres; Grupos consolidados; 2014SGR1358 altres; Icrea Academia; 2010ICREA-02 altres; Science Foundation Ireland research grant from SFI; 15/TIDA/2893 altres; Science Foundation Ireland research grant from SFI; 14/IA/2581.

DOI del artículo: 10.1149/2.0041710jss

Entidad: Universitat Rovira i Virgili

Año de publicación de la revista: 2017

Página inicial: 143

Tipo de publicación: Article Artículo Article