Repositori URV

Identificador: PC:3253

Handle: https://hdl.handle.net/20.500.11797/PC3253

Autores:
Carvajal, J. J.Mena, J.Aixart, J.O'Dwyer, C.Díaz, F.Aguió, M.

Resumen:
Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1¿±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ¿13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.