Autor según el artículo: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio;
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Lázaro Guillén, Antonio Ramon
Palabras clave: Thermal capacitance Substrate temperature Silicon-on-insulator (soi) mosfet Resistance Model Heat-transport Electrothermal characterization
Resumen: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.
Áreas temáticas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 00189383
Direcció de correo del autor: antonioramon.lazaro@urv.cat
Identificador del autor: 0000-0003-3160-5777
Fecha de alta del registro: 2023-02-18
Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
Enlace a la fuente original: https://ieeexplore.ieee.org/document/8816688
Referencia al articulo segun fuente origial: Ieee Transactions On Electron Devices. 66 (10): 4120-4125
Referencia de l'ítem segons les normes APA: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio; (2019). Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs. Ieee Transactions On Electron Devices, 66(10), 4120-4125. DOI: 10.1109/TED.2019.2935500
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI del artículo: 10.1109/TED.2019.2935500
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2019
Tipo de publicación: Journal Publications
Repositori URV