Analytical predictive 2d modeling of pinch-off behavior in nanoscale multi-gate mosfets

Identificador:  TDX:1012

Handle: https://hdl.handle.net/20.500.11797/TDX1012

Autors:  Weidemann, Michaela Patricia

Resum:
In this thesis the pinch-off behavior in nanoscale Multi-Gate MOSFETs was reviewed and with compact models described. For this a 2D approach with Schwarz-Christoffel conformal mapping technique was used. A model to calculate the current in single gate MOSFETs was derived and compared to device simulations from TCAD Sentaurus down to 50nm. For the DoubleGate MOSFET a new way to define the saturation point was found. A fully 2D closed-form model to locate this point was created. It was also found that with quantum mechanics effects a pinch-off point can occur and can be described with the same model. Furthermore the model was extended to describe the coupled pinch-off points in an asymmetrical biased DoubleGate MOSET with an even an odd mode. Also the saturation point behavior in FinFETs was examinated.