Tesis doctorals> Departament de Química

Nanoporous GaN by Chemical Vapor Deposition: crystal growth, characterization and applications

  • Dades identificatives

    Identificador: TDX:1409
    Handle: https://hdl.handle.net/20.500.11797/TDX1409
    Autors:
    Bilousov, Oleksandr

  • Altres:

    Data: 2014-07-09
    Departament/Institut: Departament de Química Física i Inorgànica Universitat Rovira i Virgili.
    Idioma: eng
    Identificador: http://hdl.handle.net/10803/283316 T 1557-2014
    Font: TDX (Tesis Doctorals en Xarxa)
    Autor: Bilousov, Oleksandr
    Director: Aguiló Díaz, Magdalena Carvajal Martí, Joan Josep
    Format: 314 p. application/pdf
    Editor: Universitat Rovira i Virgili
    Paraula Clau: Graphene porous GaN Grafeno GaN poroso semiconductor CVD GaN porós
    Títol: Nanoporous GaN by Chemical Vapor Deposition: crystal growth, characterization and applications
    Matèria: 621.3 548 538.9 537 Graphene porous GaN Grafeno GaN poroso semiconductor CVD GaN porós

  • Paraules clau:

    621.3
    548
    538.9
    537
    Graphene
    porous GaN
    Grafeno
    GaN poroso
    semiconductor
    CVD
    GaN porós

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