Nanoporous GaN by Chemical Vapor Deposition: crystal growth, characterization and applications

Identificador:  TDX:1409

Handle: https://hdl.handle.net/20.500.11797/TDX1409

Autores:  Bilousov, Oleksandr

Resumen:
Modern society is experiencing a constantly increasing demand for energy. A significative amount of the energy consumed is used for lighting purposes. Gallium nitride (GaN) is a wide band gap semiconductor with important applications in white-light LEDs, which are an attractive alternative to conventional light sources with many benefits that include long operating life, compact size, vibration resistance, low-voltage operation, minimal maintenance cost and minimal environmental impact. The savings of replacing conventional light sources by LEDs would represent a reduction of around 20% in the total electricity consumed. High-efficiency and high power LEDs are now commercially available. However, the overall efficiency requires further improvement. GaN, in its porous form, is expected to enhance the light extraction and internal quantum efficiencies of these LEDs. The main objective of this thesis is focused on fabrication of fully porous p-n junctions for future LED applications. Nanoporous GaN particles and epitaxial layers were synthesized by chemical vapor deposition (CVD) through the direct reaction between Ga and NH3, using different doping elements such as Mg and Si to generate the p- and n-type required semiconductors. The advantage of our technique is that it does not require any secondary treatment after growth to generate the pores. In this way, porous GaN p-n junctions were obtained showing promising properties for potential application in high brightness GaN-based light emitting diodes and sensor devices with improved sensitivity.