ANALYTICAL COMPACT MODELING OF NANOSCALE MULTIPLE-GATE MOSFETS.

Identificador:  TDX:1416

Handle: https://hdl.handle.net/20.500.11797/TDX1416

Autors:  Holtij, Thomas

Resum:
The main focus is on the development of an analytical, physics-based and predictive DC and AC compact model for nanoscale multiple-gate MOSFETs. The investigated devices are the standard inversion mode MOSFET and a new device concept called junctionless MOSFET. The model is derived in closed-from with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. Equations for the calculation of the threshold voltage and subthreshold slope are derived. Using Lambert's W-function and a smoothing function for the transition between the depletion and accumulation region, an unified charge density model valid for all operating regimes is developed. Dependencies between the physical device parameters and their impact on the device performance are worked out. Important short-channel and quantization effects are taken into account. Symmetry around Vds = 0 V and continuity of the drain current at derivatives of higher order are discussed. The model is validated versus numerical TCAD simulations and measurement data.