Articles producció científica> Química Física i Inorgànica

Optical and Structural Characterization of Epitaxial Nanoporous GaN Grown by CVD

  • Dades identificatives

    Identificador: PC:3249
    Handle: https://hdl.handle.net/20.500.11797/PC3249
    Autors:
    Carvajal, J. J.Mena, J.Martínez, O.Jiménez, J.Zubialevich, V. Z.Parbrook, P. J.Díaz, F.Aguiló, M.
    Resum:
    In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

  • Altres:

    Autor segons l'article: Carvajal, J. J. ; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; Díaz, F.; Aguiló, M.
    Departament: Química Física i Inorgànica
    Autor/s de la URV: CARVAJAL MARTÍ, JOAN JOSEP; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA
    Paraules clau: structural stress porous materials GaN
    Resum: In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.
    Grup de recerca: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
    Àrees temàtiques: Chemistry Química Química
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 0957-4484
    Identificador de l'autor: 0000-0002-4389-7298; ; ; ; ; ; 0000-0003-4581-4967; 0000-0001-6130-9579
    Data d'alta del registre: 2018-05-30
    Volum de revista: 28
    Versió de l'article dipositat: info:eu-repo/semantics/submittedVersion
    Programa de finançament: altres; VA081U16 altres; VA293U13 plan; ENE2014-56069-C4-4-R plan; CICYT MAT2010- 20441-C02 altres; ICREA Academia; 2010ICREA-02 plan; Retos; MAT2016-75716-C2-1-R (AEI/FEDER, UE) plan; Retos; TEC2014-55948-R
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2017
    Pàgina inicial: 375701
    Tipus de publicació: Article Artículo Article

  • Paraules clau:

    Nitrur de gal·li
    Materials porosos
    structural stress
    porous materials
    GaN
    Chemistry
    Química
    Química
    0957-4484

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