Articles producció científica> Química Física i Inorgànica

Optical and Structural Characterization of Epitaxial Nanoporous GaN Grown by CVD

  • Datos identificativos

    Identificador: PC:3249
    Handle: https://hdl.handle.net/20.500.11797/PC3249
    Autores:
    Carvajal, J. J.Mena, J.Martínez, O.Jiménez, J.Zubialevich, V. Z.Parbrook, P. J.Díaz, F.Aguiló, M.
    Resumen:
    In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

  • Otros:

    Autor según el artículo: Carvajal, J. J. ; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; Díaz, F.; Aguiló, M.
    Departamento: Química Física i Inorgànica
    Autor/es de la URV: CARVAJAL MARTÍ, JOAN JOSEP; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA
    Palabras clave: structural stress porous materials GaN
    Resumen: In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.
    Grupo de investigación: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
    Áreas temáticas: Chemistry Química Química
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 0957-4484
    Identificador del autor: 0000-0002-4389-7298; ; ; ; ; ; 0000-0003-4581-4967; 0000-0001-6130-9579
    Fecha de alta del registro: 2018-05-30
    Volumen de revista: 28
    Versión del articulo depositado: info:eu-repo/semantics/submittedVersion
    Enlace a la fuente original: https://iopscience.iop.org/article/10.1088/1361-6528/aa7e9d
    Programa de financiación: altres; VA081U16 altres; VA293U13 plan; ENE2014-56069-C4-4-R plan; CICYT MAT2010- 20441-C02 altres; ICREA Academia; 2010ICREA-02 plan; Retos; MAT2016-75716-C2-1-R (AEI/FEDER, UE) plan; Retos; TEC2014-55948-R
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    DOI del artículo: 10.1088/1361-6528/aa7e9d
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2017
    Página inicial: 375701
    Tipo de publicación: Article Artículo Article

  • Palabras clave:

    Nitrur de gal·li
    Materials porosos
    structural stress
    porous materials
    GaN
    Chemistry
    Química
    Química
    0957-4484

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