Autor segons l'article: Smaani, B. Latreche, S. Iñiguez, B.
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
e-ISSN: 1089-7550
Resum: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 0021-8979
Volum de revista: 114
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: http://scitation.aip.org/content/aip/journal/jap/114/22/10.1063/1.4844395
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.1063/1.4844395
Entitat: Universitat Rovira i Virgili.
Any de publicació de la revista: 2013
Repositori URV