Autor segons l'article: Assili, Kawther; Selmi, Wafa; Alouani, Khaled; Vilanova, Xavier
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Vilanova Salas, Javier
Paraules clau: Thickness; Thermal evaporation; Refinement; Physical-properties; Ph3ps; Optoelectronic properties; Optical-properties; Optical properties; Indium sulfide films; Indium sulfide; Electrical-properties; Dft calculation; Cvd; Climate action; Chemical-vapor-deposition; Buffer layer
Resum: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
Àrees temàtiques: Química; Physics, condensed matter; Materials science, multidisciplinary; Materials science; Materials chemistry; Materiais; Interdisciplinar; Engineering, electrical & electronic; Engenharias iv; Engenharias iii; Engenharias ii; Electronic, optical and magnetic materials; Electrical and electronic engineering; Condensed matter physics; Ciências agrárias i; Biotecnología; Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 13616641
Adreça de correu electrònic de l'autor: xavier.vilanova@urv.cat
Data d'alta del registre: 2025-02-18
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Semiconductor Science And Technology. 34 (4): 045006-045006
Referència de l'ítem segons les normes APA: Assili, Kawther; Selmi, Wafa; Alouani, Khaled; Vilanova, Xavier (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), 045006-045006. DOI: 10.1088/1361-6641/ab0446
DOI de l'article: 10.1088/1361-6641/ab0446
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2019
Tipus de publicació: Journal Publications
Repositori URV