Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature

  • Dades identificatives

    Identificador:  imarina:5754017
    Handle: https://hdl.handle.net/20.500.11797/imarina5754017
    Autors:  Assili, Kawther; Selmi, Wafa; Alouani, Khaled; Vilanova, Xavier
    Resum:
    © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.

  • Altres:

    Enllaç font original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
    Referència de l'ítem segons les normes APA: Assili, Kawther; Selmi, Wafa; Alouani, Khaled; Vilanova, Xavier (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), 045006-045006. DOI: 10.1088/1361-6641/ab0446
    Referència a l'article segons font original: Semiconductor Science And Technology. 34 (4): 045006-045006
    DOI de l'article: 10.1088/1361-6641/ab0446
    Any de publicació de la revista: 2019
    Entitat: Universitat Rovira i Virgili
    Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
    Data d'alta del registre: 2025-02-18
    Autor/s de la URV: Vilanova Salas, Javier
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipus de publicació: Journal Publications
    ISSN: 13616641
    Autor segons l'article: Assili, Kawther; Selmi, Wafa; Alouani, Khaled; Vilanova, Xavier
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Àrees temàtiques: Química, Physics, condensed matter, Materials science, multidisciplinary, Materials science, Materials chemistry, Materiais, Interdisciplinar, Engineering, electrical & electronic, Engenharias iv, Engenharias iii, Engenharias ii, Electronic, optical and magnetic materials, Electrical and electronic engineering, Condensed matter physics, Ciências agrárias i, Biotecnología, Astronomia / física
    Adreça de correu electrònic de l'autor: xavier.vilanova@urv.cat

  • Paraules clau:

    Thickness
    Thermal evaporation
    Refinement
    Physical-properties
    Ph3ps
    Optoelectronic properties
    Optical-properties
    Optical properties
    Indium sulfide films
    Indium sulfide
    Electrical-properties
    Dft calculation
    Cvd
    Climate action
    Chemical-vapor-deposition
    Buffer layer
    Condensed Matter Physics
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Materials Chemistry
    Materials Science
    Multidisciplinary
    Physics
    Condensed Matter
    Química
    Materiais
    Interdisciplinar
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Ciências agrárias i
    Biotecnología
    Astronomia / física

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