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Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature

  • Dades identificatives

    Identificador: imarina:5754017
  • Autors:

    Assili K
    Selmi W
    Alouani K
    Vilanova X
  • Altres:

    Autor segons l'article: Assili K; Selmi W; Alouani K; Vilanova X
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Vilanova Salas, Javier
    Paraules clau: Thickness Thermal evaporation Refinement Physical-properties Ph3ps Optoelectronic properties Optical-properties Optical properties Indium sulfide films Indium sulfide Electrical-properties Dft calculation Cvd Chemical-vapor-deposition Buffer layer
    Resum: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
    Àrees temàtiques: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 13616641
    Adreça de correu electrònic de l'autor: xavier.vilanova@urv.cat
    Identificador de l'autor: 0000-0002-6245-7933
    Data d'alta del registre: 2023-02-18
    Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
    Enllaç font original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
    Referència a l'article segons font original: Semiconductor Science And Technology. 34 (4):
    Referència de l'ítem segons les normes APA: Assili K; Selmi W; Alouani K; Vilanova X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), -. DOI: 10.1088/1361-6641/ab0446
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    DOI de l'article: 10.1088/1361-6641/ab0446
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2019
    Tipus de publicació: Journal Publications
  • Paraules clau:

    Condensed Matter Physics,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic,Materials Chemistry,Materials Science,Materials Science, Multidisciplinary,Physics, Condensed Matter
    Thickness
    Thermal evaporation
    Refinement
    Physical-properties
    Ph3ps
    Optoelectronic properties
    Optical-properties
    Optical properties
    Indium sulfide films
    Indium sulfide
    Electrical-properties
    Dft calculation
    Cvd
    Chemical-vapor-deposition
    Buffer layer
    Química
    Physics, condensed matter
    Materials science, multidisciplinary
    Materials science
    Materials chemistry
    Materiais
    Interdisciplinar
    Engineering, electrical & electronic
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Condensed matter physics
    Ciências agrárias i
    Biotecnología
    Astronomia / física
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