Autor segons l'article: Assili K; Selmi W; Alouani K; Vilanova X
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Vilanova Salas, Javier
Paraules clau: Thickness Thermal evaporation Refinement Physical-properties Ph3ps Optoelectronic properties Optical-properties Optical properties Indium sulfide films Indium sulfide Electrical-properties Dft calculation Cvd Chemical-vapor-deposition Buffer layer
Resum: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
Àrees temàtiques: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 13616641
Adreça de correu electrònic de l'autor: xavier.vilanova@urv.cat
Identificador de l'autor: 0000-0002-6245-7933
Data d'alta del registre: 2023-02-18
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
Referència a l'article segons font original: Semiconductor Science And Technology. 34 (4):
Referència de l'ítem segons les normes APA: Assili K; Selmi W; Alouani K; Vilanova X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), -. DOI: 10.1088/1361-6641/ab0446
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.1088/1361-6641/ab0446
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2019
Tipus de publicació: Journal Publications
Repositori URV