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Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature

  • Datos identificativos

    Identificador: imarina:5754017
    Handle: https://hdl.handle.net/20.500.11797/imarina5754017
    Autores:
    Assili KSelmi WAlouani KVilanova X
    Resumen:
    © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.

  • Otros:

    Autor según el artículo: Assili K; Selmi W; Alouani K; Vilanova X
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Vilanova Salas, Javier
    Palabras clave: Thickness Thermal evaporation Refinement Physical-properties Ph3ps Optoelectronic properties Optical-properties Optical properties Indium sulfide films Indium sulfide Electrical-properties Dft calculation Cvd Chemical-vapor-deposition Buffer layer
    Resumen: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
    Áreas temáticas: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 13616641
    Direcció de correo del autor: xavier.vilanova@urv.cat
    Identificador del autor: 0000-0002-6245-7933
    Fecha de alta del registro: 2023-02-18
    Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
    Referencia al articulo segun fuente origial: Semiconductor Science And Technology. 34 (4):
    Referencia de l'ítem segons les normes APA: Assili K; Selmi W; Alouani K; Vilanova X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), -. DOI: 10.1088/1361-6641/ab0446
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2019
    Tipo de publicación: Journal Publications

  • Palabras clave:

    Condensed Matter Physics,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic,Materials Chemistry,Materials Science,Materials Science, Multidisciplinary,Physics, Condensed Matter
    Thickness
    Thermal evaporation
    Refinement
    Physical-properties
    Ph3ps
    Optoelectronic properties
    Optical-properties
    Optical properties
    Indium sulfide films
    Indium sulfide
    Electrical-properties
    Dft calculation
    Cvd
    Chemical-vapor-deposition
    Buffer layer
    Química
    Physics, condensed matter
    Materials science, multidisciplinary
    Materials science
    Materials chemistry
    Materiais
    Interdisciplinar
    Engineering, electrical & electronic
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Condensed matter physics
    Ciências agrárias i
    Biotecnología
    Astronomia / física

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