Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature

  • Datos identificativos

    Identificador:  imarina:5754017
    Handle: https://hdl.handle.net/20.500.11797/imarina5754017
    Autores:  Assili, K; Selmi, W; Alouani, K; Vilanova, X
    Resumen:
    © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.

  • Otros:

    Enlace a la fuente original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
    Referencia de l'ítem segons les normes APA: Assili, K; Selmi, W; Alouani, K; Vilanova, X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), 045006-045006. DOI: 10.1088/1361-6641/ab0446
    Referencia al articulo segun fuente origial: Semiconductor Science And Technology. 34 (4): 045006-045006
    DOI del artículo: 10.1088/1361-6641/ab0446
    Año de publicación de la revista: 2019-04-01
    Entidad: Universitat Rovira i Virgili
    Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
    Fecha de alta del registro: 2026-05-09
    Autor/es de la URV: Vilanova Salas, Javier
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipo de publicación: Journal Publications
    ISSN: 13616641
    Autor según el artículo: Assili, K; Selmi, W; Alouani, K; Vilanova, X
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Áreas temáticas: Physics, condensed matter, Materials science, multidisciplinary, Materials science, Materials chemistry, Engineering, electrical & electronic, Engenharias iv, Electronic, optical and magnetic materials, Electrical and electronic engineering, Condensed matter physics, Astronomia / física
    Direcció de correo del autor: xavier.vilanova@urv.cat, xavier.vilanova@urv.cat

  • Palabras clave:

    Thickness
    Thermal evaporation
    Refinement
    Physical-properties
    Ph3ps
    Optoelectronic properties
    Optical-properties
    Optical properties
    Indium sulfide films
    Indium sulfide
    Electrical-properties
    Dft calculation
    Cvd
    Climate action
    Chemical-vapor-deposition
    Buffer layer
    Condensed Matter Physics
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Materials Chemistry
    Materials Science
    Multidisciplinary
    Physics
    Condensed Matter
    Engenharias iv
    Astronomia / física

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