Autor según el artículo: Assili K; Selmi W; Alouani K; Vilanova X
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Vilanova Salas, Javier
Palabras clave: Thickness Thermal evaporation Refinement Physical-properties Ph3ps Optoelectronic properties Optical-properties Optical properties Indium sulfide films Indium sulfide Electrical-properties Dft calculation Cvd Chemical-vapor-deposition Buffer layer
Resumen: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
Áreas temáticas: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 13616641
Direcció de correo del autor: xavier.vilanova@urv.cat
Identificador del autor: 0000-0002-6245-7933
Fecha de alta del registro: 2023-02-18
Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
Enlace a la fuente original: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
Referencia al articulo segun fuente origial: Semiconductor Science And Technology. 34 (4):
Referencia de l'ítem segons les normes APA: Assili K; Selmi W; Alouani K; Vilanova X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), -. DOI: 10.1088/1361-6641/ab0446
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI del artículo: 10.1088/1361-6641/ab0446
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2019
Tipo de publicación: Journal Publications
Repositori URV