Author, as appears in the article.: Assili K; Selmi W; Alouani K; Vilanova X
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Vilanova Salas, Javier
Keywords: Thickness Thermal evaporation Refinement Physical-properties Ph3ps Optoelectronic properties Optical-properties Optical properties Indium sulfide films Indium sulfide Electrical-properties Dft calculation Cvd Chemical-vapor-deposition Buffer layer
Abstract: © 2016 Institute of Physics Publishing.All right reserved. In this work, we investigate the effects of both growth temperature and substrate nature on different properties of indium sulfide thin films prepared by chemical vapor deposition method using triphenylphosphine sulfide as a sulfur precursor. The structural, morphological, and optical properties of the resulting thin films were characterized using X-ray diffraction, scanning electron microscopy (SEM) and UV-vis spectroscopy respectively. The structural study has proved that pure nanocrsytalline β-indium sulfide films were obtained at 300 and 400 °.
Thematic Areas: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 13616641
Author's mail: xavier.vilanova@urv.cat
Author identifier: 0000-0002-6245-7933
Record's date: 2023-02-18
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://iopscience.iop.org/article/10.1088/1361-6641/ab0446
Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Semiconductor Science And Technology. 34 (4):
APA: Assili K; Selmi W; Alouani K; Vilanova X (2019). Computational study and characteristics of In2S3 thin films: Effects of substrate nature and deposition temperature. Semiconductor Science And Technology, 34(4), -. DOI: 10.1088/1361-6641/ab0446
Article's DOI: 10.1088/1361-6641/ab0446
Entity: Universitat Rovira i Virgili
Journal publication year: 2019
Publication Type: Journal Publications
Repositori URV