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Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET

  • Dades identificatives

    Identificador: imarina:5873955
    Autors:
    Abdelmoneam AIñiguez BFedawy M
    Resum:
    © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
  • Altres:

    Autor segons l'article: Abdelmoneam A; Iñiguez B; Fedawy M
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Paraules clau: Nanowire mosfets Iii-v semiconductor Compact modeling
    Resum: © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2023-02-18
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Enllaç font original: https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2018.5075
    Referència a l'article segons font original: Proceedings Of The 2018 12th Spanish Conference On Electron Devices, Cde 2018.
    Referència de l'ítem segons les normes APA: Abdelmoneam A; Iñiguez B; Fedawy M (2018). Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET.
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    DOI de l'article: 10.1109/CDE.2018.8597131
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2018
    Tipus de publicació: Proceedings Paper
  • Paraules clau:

    Nanowire mosfets
    Iii-v semiconductor
    Compact modeling
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