Autor según el artículo: Abdelmoneam A; Iñiguez B; Fedawy M
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin
Palabras clave: Nanowire mosfets Iii-v semiconductor Compact modeling
Resumen: © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2023-02-18
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Referencia al articulo segun fuente origial: Proceedings Of The 2018 12th Spanish Conference On Electron Devices, Cde 2018.
Referencia de l'ítem segons les normes APA: Abdelmoneam A; Iñiguez B; Fedawy M (2018). Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET.
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2018
Tipo de publicación: Proceedings Paper
Repositori URV