Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET

Identificador:  imarina:5873955

Handle: https://hdl.handle.net/20.500.11797/imarina5873955

Autores:  Abdelmoneam A; Iñiguez B; Fedawy M

Resumen:
© 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.