Autor segons l'article: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
e-ISSN: 1557-9646
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Voltage measurement Verilog-a Transistors Thin film transistors Semiconductor device modeling Mobility Inverters Integrated circuit modeling Dynamic model Circuit simulator Capacitances model. Capacitances model Capacitance
Resum: CCBY The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.
Àrees temàtiques: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 0018-9383
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/9296235
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society. 9 464-468
Referència de l'ítem segons les normes APA: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A (2021). Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM). Ieee Journal Of The Electron Devices Society, 9(), 464-468. DOI: 10.1109/JEDS.2020.3045347
DOI de l'article: 10.1109/JEDS.2020.3045347
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2021
Tipus de publicació: Journal Publications