Autor según el artículo: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A

Departamento: Enginyeria Electrònica, Elèctrica i Automàtica

e-ISSN: 1557-9646

Autor/es de la URV: Iñiguez Nicolau, Benjamin

Palabras clave: Voltage measurement Verilog-a Transistors Thin film transistors Semiconductor device modeling Mobility Inverters Integrated circuit modeling Dynamic model Circuit simulator Capacitances model. Capacitances model Capacitance

Resumen: CCBY The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.

Áreas temáticas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology

Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 0018-9383

Direcció de correo del autor: benjamin.iniguez@urv.cat

Identificador del autor: 0000-0002-6504-7980

Fecha de alta del registro: 2023-02-19

Versión del articulo depositado: info:eu-repo/semantics/publishedVersion

Enlace a la fuente original: https://ieeexplore.ieee.org/document/9296235

URL Documento de licencia: http://repositori.urv.cat/ca/proteccio-de-dades/

Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society. 9 464-468

Referencia de l'ítem segons les normes APA: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A (2021). Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM). Ieee Journal Of The Electron Devices Society, 9(), 464-468. DOI: 10.1109/JEDS.2020.3045347

DOI del artículo: 10.1109/JEDS.2020.3045347

Entidad: Universitat Rovira i Virgili

Año de publicación de la revista: 2021

Tipo de publicación: Journal Publications