Autor segons l'article: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed;
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Voltage-dependence Threshold voltage Thin-film transistors Thin film transistors Semiconductor device noise Semiconductor device modeling Parameter extraction Organic thin film transistors Mobility Mathematical model Low-frequency noise Integrated circuit modeling Field-effect transistors Computational modeling Charge-transport Capacitance Biological system modeling Analytic model 1/f noise
Resum: We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
Àrees temàtiques: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/9520649
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society. 9 911-932
Referència de l'ítem segons les normes APA: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
DOI de l'article: 10.1109/JEDS.2021.3106836
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2021
Tipus de publicació: Journal Publications
Repositori URV