Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

  • Dades identificatives

    Identificador:  imarina:9230611
    Autors:  Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    Resum:
    We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
  • Altres:

    Enllaç font original: https://ieeexplore.ieee.org/document/9520649
    Referència de l'ítem segons les normes APA: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
    Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society. 9 911-932
    DOI de l'article: 10.1109/JEDS.2021.3106836
    Any de publicació de la revista: 2021
    Entitat: Universitat Rovira i Virgili
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Data d'alta del registre: 2025-02-19
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipus de publicació: Journal Publications
    Autor segons l'article: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Àrees temàtiques: Engineering, electrical & electronic, Electronic, optical and magnetic materials, Electrical and electronic engineering, Biotechnology
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
  • Paraules clau:

    Voltage-dependence
    Threshold voltage
    Thin-film transistors
    Thin film transistors
    Semiconductor device noise
    Semiconductor device modeling
    Parameter extraction
    Organic thin film transistors
    Mobility
    Mathematical model
    Low-frequency noise
    Integrated circuit modeling
    Field-effect transistors
    Computational modeling
    Charge-transport
    Capacitance
    Biological system modeling
    Analytic model
    1/f noise
    Biotechnology
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
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