Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

  • Identification data

    Identifier:  imarina:9230611
    Authors:  Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    Abstract:
    We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
  • Others:

    Link to the original source: https://ieeexplore.ieee.org/document/9520649
    APA: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
    Paper original source: Ieee Journal Of The Electron Devices Society. 9 911-932
    Article's DOI: 10.1109/JEDS.2021.3106836
    Journal publication year: 2021
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/publishedVersion
    Record's date: 2025-02-19
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Journal Publications
    Author, as appears in the article.: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Thematic Areas: Engineering, electrical & electronic, Electronic, optical and magnetic materials, Electrical and electronic engineering, Biotechnology
    Author's mail: benjamin.iniguez@urv.cat
  • Keywords:

    Voltage-dependence
    Threshold voltage
    Thin-film transistors
    Thin film transistors
    Semiconductor device noise
    Semiconductor device modeling
    Parameter extraction
    Organic thin film transistors
    Mobility
    Mathematical model
    Low-frequency noise
    Integrated circuit modeling
    Field-effect transistors
    Computational modeling
    Charge-transport
    Capacitance
    Biological system modeling
    Analytic model
    1/f noise
    Biotechnology
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
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