Autor según el artículo: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed;
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin
Palabras clave: Voltage-dependence Threshold voltage Thin-film transistors Thin film transistors Semiconductor device noise Semiconductor device modeling Parameter extraction Organic thin film transistors Mobility Mathematical model Low-frequency noise Integrated circuit modeling Field-effect transistors Computational modeling Charge-transport Capacitance Biological system modeling Analytic model 1/f noise
Resumen: We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
Áreas temáticas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2024-07-27
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://ieeexplore.ieee.org/document/9520649
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society. 9 911-932
Referencia de l'ítem segons les normes APA: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
DOI del artículo: 10.1109/JEDS.2021.3106836
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2021
Tipo de publicación: Journal Publications