Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

  • Datos identificativos

    Identificador:  imarina:9230611
    Autores:  Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    Resumen:
    We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
  • Otros:

    Enlace a la fuente original: https://ieeexplore.ieee.org/document/9520649
    Referencia de l'ítem segons les normes APA: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
    Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society. 9 911-932
    DOI del artículo: 10.1109/JEDS.2021.3106836
    Año de publicación de la revista: 2021
    Entidad: Universitat Rovira i Virgili
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Fecha de alta del registro: 2025-02-19
    Autor/es de la URV: Iñiguez Nicolau, Benjamin
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipo de publicación: Journal Publications
    Autor según el artículo: Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Áreas temáticas: Engineering, electrical & electronic, Electronic, optical and magnetic materials, Electrical and electronic engineering, Biotechnology
    Direcció de correo del autor: benjamin.iniguez@urv.cat
  • Palabras clave:

    Voltage-dependence
    Threshold voltage
    Thin-film transistors
    Thin film transistors
    Semiconductor device noise
    Semiconductor device modeling
    Parameter extraction
    Organic thin film transistors
    Mobility
    Mathematical model
    Low-frequency noise
    Integrated circuit modeling
    Field-effect transistors
    Computational modeling
    Charge-transport
    Capacitance
    Biological system modeling
    Analytic model
    1/f noise
    Biotechnology
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
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