Autor segons l'article: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul;
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Lázaro Guillén, Antonio Ramon
Paraules clau: Time Thermal resistance Temperature measurement Temperature Technologies Semiconductor device measurement Resistance Pulsed measurement Modfets Logic gates High-electron-mobility transistors (hemts) Hemts Gallium nitride Electrothermal characterization Algan/gan hemts Ac/pulsed measurement Ac
Resum: In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.
Àrees temàtiques: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: antonioramon.lazaro@urv.cat
Identificador de l'autor: 0000-0003-3160-5777
Data d'alta del registre: 2024-09-07
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/9741725
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Transactions On Electron Devices. 69 (5): 2307-2312
Referència de l'ítem segons les normes APA: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul; (2022). RF Extraction of Thermal Resistance for GaN HEMTs on Silicon. Ieee Transactions On Electron Devices, 69(5), 2307-2312. DOI: 10.1109/ted.2022.3159611
DOI de l'article: 10.1109/ted.2022.3159611
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2022
Tipus de publicació: Journal Publications
Repositori URV