Autor según el artículo: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul;
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Lázaro Guillén, Antonio Ramon
Palabras clave: Time Thermal resistance Temperature measurement Temperature Technologies Semiconductor device measurement Resistance Pulsed measurement Modfets Logic gates High-electron-mobility transistors (hemts) Hemts Gallium nitride Electrothermal characterization Algan/gan hemts Ac/pulsed measurement Ac
Resumen: In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.
Áreas temáticas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: antonioramon.lazaro@urv.cat
Identificador del autor: 0000-0003-3160-5777
Fecha de alta del registro: 2024-09-07
Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
Enlace a la fuente original: https://ieeexplore.ieee.org/document/9741725
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Ieee Transactions On Electron Devices. 69 (5): 2307-2312
Referencia de l'ítem segons les normes APA: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul; (2022). RF Extraction of Thermal Resistance for GaN HEMTs on Silicon. Ieee Transactions On Electron Devices, 69(5), 2307-2312. DOI: 10.1109/ted.2022.3159611
DOI del artículo: 10.1109/ted.2022.3159611
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2022
Tipo de publicación: Journal Publications
Repositori URV