Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

  • Identification data

    Identifier: imarina:9261317
    Handle: https://hdl.handle.net/20.500.11797/imarina9261317
    Authors:
    Gonzalez, BenitoLazaro, AntonioRodriguez, Raul
    Abstract:
    In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.

  • Others:

    Author, as appears in the article.: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul;
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Lázaro Guillén, Antonio Ramon
    Keywords: Time Thermal resistance Temperature measurement Temperature Technologies Semiconductor device measurement Resistance Pulsed measurement Modfets Logic gates High-electron-mobility transistors (hemts) Hemts Gallium nitride Electrothermal characterization Algan/gan hemts Ac/pulsed measurement Ac
    Abstract: In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.
    Thematic Areas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: antonioramon.lazaro@urv.cat
    Author identifier: 0000-0003-3160-5777
    Record's date: 2024-09-07
    Papper version: info:eu-repo/semantics/acceptedVersion
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Ieee Transactions On Electron Devices. 69 (5): 2307-2312
    APA: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul; (2022). RF Extraction of Thermal Resistance for GaN HEMTs on Silicon. Ieee Transactions On Electron Devices, 69(5), 2307-2312. DOI: 10.1109/ted.2022.3159611
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2022
    Publication Type: Journal Publications

  • Keywords:

    Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic,Physics, Applied
    Time
    Thermal resistance
    Temperature measurement
    Temperature
    Technologies
    Semiconductor device measurement
    Resistance
    Pulsed measurement
    Modfets
    Logic gates
    High-electron-mobility transistors (hemts)
    Hemts
    Gallium nitride
    Electrothermal characterization
    Algan/gan hemts
    Ac/pulsed measurement
    Ac
    Physics, applied
    Materiais
    Interdisciplinar
    Engineering, electrical & electronic
    Engenharias iv
    Engenharias ii
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Ciência da computação
    Astronomia / física

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