Author, as appears in the article.: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul;
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Lázaro Guillén, Antonio Ramon
Keywords: Time Thermal resistance Temperature measurement Temperature Technologies Semiconductor device measurement Resistance Pulsed measurement Modfets Logic gates High-electron-mobility transistors (hemts) Hemts Gallium nitride Electrothermal characterization Algan/gan hemts Ac/pulsed measurement Ac
Abstract: In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.
Thematic Areas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: antonioramon.lazaro@urv.cat
Author identifier: 0000-0003-3160-5777
Record's date: 2024-09-07
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://ieeexplore.ieee.org/document/9741725
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Ieee Transactions On Electron Devices. 69 (5): 2307-2312
APA: Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul; (2022). RF Extraction of Thermal Resistance for GaN HEMTs on Silicon. Ieee Transactions On Electron Devices, 69(5), 2307-2312. DOI: 10.1109/ted.2022.3159611
Article's DOI: 10.1109/ted.2022.3159611
Entity: Universitat Rovira i Virgili
Journal publication year: 2022
Publication Type: Journal Publications