Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC

  • Dades identificatives

    Identificador: imarina:9265281
    Handle: https://hdl.handle.net/20.500.11797/imarina9265281
    Autors:
    Hernández ISGarduño SICerdeira AIñiguez BEstrada M
    Resum:
    In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as semiconductor, fabricated at temperatures below 200oC. It is shown that TFTs, with VTH =0.55 V, µFE>250 cm2/Vs, SS=200 mV/dec corresponding to Dit = 1x1012 cm-2eV-1 and Ion /Ioff >107, can be obtained, using a thermal annealing at 200oC in N2, after the semiconductor layer is deposited. The dielectric constant of the HfO2 layer deposited by RF sputtering was 19.5, allowing devices to work within the operating voltage range of 2 V. An important increase of the field effect mobility is obtained, combining a high-k gate dielectric and a high carrier concentration a-HIZO layer, with a lower density of localized states.

  • Altres:

    Autor segons l'article: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: IÑIGUEZ NICOLAU, BENJAMIN
    Paraules clau: Density of states Hfo gate dielectric 2 Interface trap density Low temperature aostft process Passivated a-hizo tfts
    Resum: In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as semiconductor, fabricated at temperatures below 200oC. It is shown that TFTs, with VTH =0.55 V, µFE>250 cm2/Vs, SS=200 mV/dec corresponding to Dit = 1x1012 cm-2eV-1 and Ion /Ioff >107, can be obtained, using a thermal annealing at 200oC in N2, after the semiconductor layer is deposited. The dielectric constant of the HfO2 layer deposited by RF sputtering was 19.5, allowing devices to work within the operating voltage range of 2 V. An important increase of the field effect mobility is obtained, combining a high-k gate dielectric and a high carrier concentration a-HIZO layer, with a lower density of localized states.
    Àrees temàtiques: Astronomia / física Ciência da computação Ciencias sociales Electrical and electronic engineering Engenharias iii Engenharias iv Interdisciplinar Matemática / probabilidade e estatística Materiais
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2022-06-18
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Referència a l'article segons font original: Journal Of Integrated Circuits And Systems. 16 (3):
    Referència de l'ítem segons les normes APA: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M (2021). Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC. Journal Of Integrated Circuits And Systems, 16(3), -. DOI: 10.29292/jics.v16i3.561
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2021
    Tipus de publicació: Journal Publications

  • Paraules clau:

    Electrical and Electronic Engineering
    Density of states
    Hfo gate dielectric 2
    Interface trap density
    Low temperature aostft process
    Passivated a-hizo tfts
    Astronomia / física
    Ciência da computação
    Ciencias sociales
    Electrical and electronic engineering
    Engenharias iii
    Engenharias iv
    Interdisciplinar
    Matemática / probabilidade e estatística
    Materiais

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