Autor según el artículo: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: IÑIGUEZ NICOLAU, BENJAMIN
Palabras clave: Density of states Hfo gate dielectric 2 Interface trap density Low temperature aostft process Passivated a-hizo tfts
Resumen: In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as semiconductor, fabricated at temperatures below 200oC. It is shown that TFTs, with VTH =0.55 V, µFE>250 cm2/Vs, SS=200 mV/dec corresponding to Dit = 1x1012 cm-2eV-1 and Ion /Ioff >107, can be obtained, using a thermal annealing at 200oC in N2, after the semiconductor layer is deposited. The dielectric constant of the HfO2 layer deposited by RF sputtering was 19.5, allowing devices to work within the operating voltage range of 2 V. An important increase of the field effect mobility is obtained, combining a high-k gate dielectric and a high carrier concentration a-HIZO layer, with a lower density of localized states.
Áreas temáticas: Astronomia / física Ciência da computação Ciencias sociales Electrical and electronic engineering Engenharias iii Engenharias iv Interdisciplinar Matemática / probabilidade e estatística Materiais
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2022-06-18
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://jics.org.br/ojs/index.php/JICS/article/view/561
Referencia al articulo segun fuente origial: Journal Of Integrated Circuits And Systems. 16 (3):
Referencia de l'ítem segons les normes APA: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M (2021). Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC. Journal Of Integrated Circuits And Systems, 16(3), -. DOI: 10.29292/jics.v16i3.561
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI del artículo: 10.29292/jics.v16i3.561
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2021
Tipo de publicación: Journal Publications
Repositori URV