Author, as appears in the article.: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M

Department: Enginyeria Electrònica, Elèctrica i Automàtica

URV's Author/s: IÑIGUEZ NICOLAU, BENJAMIN

Keywords: Density of states Hfo gate dielectric 2 Interface trap density Low temperature aostft process Passivated a-hizo tfts

Abstract: In this paper, we report the effects of thermal annealing on Poly(methyl methacrylate) (PMMA) passivated, bottom gate thin film transistors, with amorphous hafnium oxide (HfO2) as gate dielectric and amorphous hafnium-indium-zinc oxide (a-HIZO) as semiconductor, fabricated at temperatures below 200oC. It is shown that TFTs, with VTH =0.55 V, µFE>250 cm2/Vs, SS=200 mV/dec corresponding to Dit = 1x1012 cm-2eV-1 and Ion /Ioff >107, can be obtained, using a thermal annealing at 200oC in N2, after the semiconductor layer is deposited. The dielectric constant of the HfO2 layer deposited by RF sputtering was 19.5, allowing devices to work within the operating voltage range of 2 V. An important increase of the field effect mobility is obtained, combining a high-k gate dielectric and a high carrier concentration a-HIZO layer, with a lower density of localized states.

Thematic Areas: Astronomia / física Ciência da computação Ciencias sociales Electrical and electronic engineering Engenharias iii Engenharias iv Interdisciplinar Matemática / probabilidade e estatística Materiais

licence for use: https://creativecommons.org/licenses/by/3.0/es/

Author's mail: benjamin.iniguez@urv.cat

Author identifier: 0000-0002-6504-7980

Record's date: 2022-06-18

Papper version: info:eu-repo/semantics/publishedVersion

Link to the original source: https://jics.org.br/ojs/index.php/JICS/article/view/561

Papper original source: Journal Of Integrated Circuits And Systems. 16 (3):

APA: Hernández IS; Garduño SI; Cerdeira A; Iñiguez B; Estrada M (2021). Effects of Thermal Annealing on the Density of States in Low Voltage Operating Range, High Mobility, Hf-In-ZnO/HfO2 TFTs Fabricated at Temperatures Below 200oC. Journal Of Integrated Circuits And Systems, 16(3), -. DOI: 10.29292/jics.v16i3.561

Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/

Article's DOI: 10.29292/jics.v16i3.561

Entity: Universitat Rovira i Virgili

Journal publication year: 2021

Publication Type: Journal Publications