Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Large-Signal DG-MOSFET Modelling for RFID Rectification

  • Dades identificatives

    Identificador: imarina:9282625
    Autors:
    Rodríguez RGonzález BGarcía JLázaro AIñiguez BHernández A
    Resum:
    This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
  • Altres:

    Autor segons l'article: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
    Paraules clau: Affordable and clean energy
    Resum: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
    Àrees temàtiques: Química Physics, condensed matter Materiais Engenharias ii Condensed matter physics Astronomia / física
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0003-3160-5777 0000-0002-6504-7980
    Data d'alta del registre: 2024-11-16
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Enllaç font original: https://www.hindawi.com/journals/acmp/2016/8017139/
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referència a l'article segons font original: Advances In Condensed Matter Physics. 2016 1-6
    Referència de l'ítem segons les normes APA: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), 1-6. DOI: 10.1155/2016/8017139
    DOI de l'article: 10.1155/2016/8017139
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2016
    Tipus de publicació: Journal Publications
  • Paraules clau:

    Condensed Matter Physics,Physics, Condensed Matter
    Affordable and clean energy
    Química
    Physics, condensed matter
    Materiais
    Engenharias ii
    Condensed matter physics
    Astronomia / física
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