Large-Signal DG-MOSFET Modelling for RFID Rectification

Identificador:  imarina:9282625

Handle: https://hdl.handle.net/20.500.11797/imarina9282625

Autors:  Rodriguez, R; Gonzalez, B; Garcia, J; Lazaro, A; Iniguez, B; Hernandez, A

Resum:
This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.