Autor según el artículo: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Palabras clave: Affordable and clean energy
Resumen: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
Áreas temáticas: Química Physics, condensed matter Materiais Engenharias ii Condensed matter physics Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
Identificador del autor: 0000-0003-3160-5777 0000-0002-6504-7980
Fecha de alta del registro: 2024-11-16
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Advances In Condensed Matter Physics. 2016 1-6
Referencia de l'ítem segons les normes APA: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), 1-6. DOI: 10.1155/2016/8017139
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2016
Tipo de publicación: Journal Publications
Repositori URV