Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Large-Signal DG-MOSFET Modelling for RFID Rectification

  • Datos identificativos

    Identificador: imarina:9282625
    Autores:
    Rodríguez RGonzález BGarcía JLázaro AIñiguez BHernández A
    Resumen:
    This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
  • Otros:

    Autor según el artículo: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
    Palabras clave: Affordable and clean energy
    Resumen: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
    Áreas temáticas: Química Physics, condensed matter Materiais Engenharias ii Condensed matter physics Astronomia / física
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
    Identificador del autor: 0000-0003-3160-5777 0000-0002-6504-7980
    Fecha de alta del registro: 2024-11-16
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Enlace a la fuente original: https://www.hindawi.com/journals/acmp/2016/8017139/
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referencia al articulo segun fuente origial: Advances In Condensed Matter Physics. 2016 1-6
    Referencia de l'ítem segons les normes APA: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), 1-6. DOI: 10.1155/2016/8017139
    DOI del artículo: 10.1155/2016/8017139
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2016
    Tipo de publicación: Journal Publications
  • Palabras clave:

    Condensed Matter Physics,Physics, Condensed Matter
    Affordable and clean energy
    Química
    Physics, condensed matter
    Materiais
    Engenharias ii
    Condensed matter physics
    Astronomia / física
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