Autor segons l'article: Smaani B; Latreche S; Iñiguez B
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Physics; Physical properties; Metal oxide semiconductor field-effect transistors; Field effect transistors; Drain-induced barrier lowering; Drain-current modeling; Cylindrical surrounding-gate; Charge sharing effects; Channel length modulation; Analytical expressions; 3-d numerical simulation
Resum: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. © 2013 AIP Publishing LLC.
Àrees temàtiques: Química; Physics, applied; Physics and astronomy (miscellaneous); Physics and astronomy (all); Odontología; Medicina iii; Medicina ii; Medicina i; Materiais; Matemática / probabilidade e estatística; Interdisciplinar; Geociências; General physics and astronomy; Farmacia; Ensino; Engenharias iv; Engenharias iii; Engenharias ii; Engenharias i; Condensed matter physics; Ciências biológicas iii; Ciências biológicas i; Ciências ambientais; Ciências agrárias i; Ciência da computação; Biotecnología; Biodiversidade; Atomic and molecular physics, and optics; Astronomia / física; Antropologia / arqueologia
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Data d'alta del registre: 2025-02-08
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://aip.scitation.org/doi/10.1063/1.4844395
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Journal Of Applied Physics. 114 (22):
Referència de l'ítem segons les normes APA: Smaani B; Latreche S; Iñiguez B (2013). Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects. Journal Of Applied Physics, 114(22), -. DOI: 10.1063/1.4844395
DOI de l'article: 10.1063/1.4844395
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2013
Tipus de publicació: Journal Publications
Repositori URV