Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

Identificador:  imarina:9285360

Handle: https://hdl.handle.net/20.500.11797/imarina9285360

Autors:  Smaani, B; Latreche, S; Iñiguez, B

Resum:
In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. © 2013 AIP Publishing LLC.