Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

  • Identification data

    Identifier: imarina:9285360
  • Authors:

    Smaani B
    Latreche S
    Iñiguez B
  • Others:

    Author, as appears in the article.: Smaani B; Latreche S; Iñiguez B
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Physics Physical properties Metal oxide semiconductor field-effect transistors Field effect transistors Drain-induced barrier lowering Drain-current modeling Cylindrical surrounding-gate Charge sharing effects Channel length modulation Analytical expressions 3-d numerical simulation
    Abstract: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. © 2013 AIP Publishing LLC.
    Thematic Areas: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Astronomia / física Antropologia / arqueologia
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2024-01-14
    Papper version: info:eu-repo/semantics/publishedVersion
    Link to the original source: https://aip.scitation.org/doi/10.1063/1.4844395
    Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Journal Of Applied Physics. 114 (22):
    APA: Smaani B; Latreche S; Iñiguez B (2013). Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects. Journal Of Applied Physics, 114(22), -. DOI: 10.1063/1.4844395
    Article's DOI: 10.1063/1.4844395
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2013
    Publication Type: Journal Publications
  • Keywords:

    Physics and Astronomy (Miscellaneous),Physics, Applied
    Physics
    Physical properties
    Metal oxide semiconductor field-effect transistors
    Field effect transistors
    Drain-induced barrier lowering
    Drain-current modeling
    Cylindrical surrounding-gate
    Charge sharing effects
    Channel length modulation
    Analytical expressions
    3-d numerical simulation
    Química
    Physics, applied
    Physics and astronomy (miscellaneous)
    Physics and astronomy (all)
    Odontología
    Medicina iii
    Medicina ii
    Medicina i
    Materiais
    Matemática / probabilidade e estatística
    Interdisciplinar
    Geociências
    General physics and astronomy
    Farmacia
    Ensino
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Engenharias i
    Ciências biológicas iii
    Ciências biológicas i
    Ciências ambientais
    Ciências agrárias i
    Ciência da computação
    Biotecnología
    Biodiversidade
    Astronomia / física
    Antropologia / arqueologia
  • Documents:

  • Cerca a google

    Search to google scholar