Autor según el artículo: Smaani B; Latreche S; Iñiguez B
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin
Palabras clave: Physics Physical properties Metal oxide semiconductor field-effect transistors Field effect transistors Drain-induced barrier lowering Drain-current modeling Cylindrical surrounding-gate Charge sharing effects Channel length modulation Analytical expressions 3-d numerical simulation
Resumen: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. © 2013 AIP Publishing LLC.
Áreas temáticas: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Astronomia / física Antropologia / arqueologia
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2024-09-07
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://aip.scitation.org/doi/10.1063/1.4844395
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Journal Of Applied Physics. 114 (22):
Referencia de l'ítem segons les normes APA: Smaani B; Latreche S; Iñiguez B (2013). Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects. Journal Of Applied Physics, 114(22), -. DOI: 10.1063/1.4844395
DOI del artículo: 10.1063/1.4844395
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2013
Tipo de publicación: Journal Publications
Repositori URV