Autor segons l'article: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Paraules clau: Velocity saturation Ultrathin films Thermal resistance Thermal conductivity Silicon-on- insulators (soi) Silicon on insulator technology Short-channel effect Self-heating effects (sse) Self-heating effect Output characteristics Mosfet devices Integrated circuits Heat resistance Fins (heat exchange) Fin-shaped field-effect transistor (finfet) Field effect transistors Equivalent thermal circuits Compact modelling
Resum: DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers. © 2015 Elsevier Ltd. All rights reserved.
Àrees temàtiques: Surfaces, coatings and films Nanoscience and nanotechnology Nanoscience & nanotechnology Medicina ii Materiais Interdisciplinar Farmacia Ensino Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências biológicas ii Ciências biológicas i Ciência da computação Biodiversidade Atomic and molecular physics, and optics Astronomia / física Artes
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0003-3160-5777 0000-0002-6504-7980
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://www.sciencedirect.com/science/article/abs/pii/S0026269215000397
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Microelectronics Journal. 46 (4): 320-326
Referència de l'ítem segons les normes APA: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A (2015). DC self-heating effects modelling in SOI and bulk FinFETs. Microelectronics Journal, 46(4), 320-326. DOI: 10.1016/j.mejo.2015.02.003
DOI de l'article: 10.1016/j.mejo.2015.02.003
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2015
Tipus de publicació: Journal Publications
Repositori URV