Autor según el artículo: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Palabras clave: Velocity saturation Ultrathin films Thermal resistance Thermal conductivity Silicon-on- insulators (soi) Silicon on insulator technology Short-channel effect Self-heating effects (sse) Self-heating effect Output characteristics Mosfet devices Integrated circuits Heat resistance Fins (heat exchange) Fin-shaped field-effect transistor (finfet) Field effect transistors Equivalent thermal circuits Compact modelling
Resumen: DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers. © 2015 Elsevier Ltd. All rights reserved.
Áreas temáticas: Surfaces, coatings and films Nanoscience and nanotechnology Nanoscience & nanotechnology Medicina ii Materiais Interdisciplinar Farmacia Ensino Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências biológicas ii Ciências biológicas i Ciência da computação Biodiversidade Atomic and molecular physics, and optics Astronomia / física Artes
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
Identificador del autor: 0000-0003-3160-5777 0000-0002-6504-7980
Fecha de alta del registro: 2024-07-27
Versión del articulo depositado: info:eu-repo/semantics/acceptedVersion
Enlace a la fuente original: https://www.sciencedirect.com/science/article/abs/pii/S0026269215000397
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Microelectronics Journal. 46 (4): 320-326
Referencia de l'ítem segons les normes APA: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A (2015). DC self-heating effects modelling in SOI and bulk FinFETs. Microelectronics Journal, 46(4), 320-326. DOI: 10.1016/j.mejo.2015.02.003
DOI del artículo: 10.1016/j.mejo.2015.02.003
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2015
Tipo de publicación: Journal Publications
Repositori URV