Autor segons l'article: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Fadil, Dalal
Paraules clau: Transistors Mmic Microwave Integrated circuits Graphene Chemical-vapor-deposition Active balun 2d materials
Resum: This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10 degrees and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.
Àrees temàtiques: Química Process chemistry and technology Physics, applied Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais Instrumentation General materials science General engineering Fluid flow and transfer processes Engineering, multidisciplinary Engineering (miscellaneous) Engineering (all) Engenharias ii Engenharias i Computer science applications Ciências biológicas iii Ciências biológicas ii Ciências biológicas i Ciências agrárias i Ciência de alimentos Chemistry, multidisciplinary Biodiversidade Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: dalal.fadil@urv.cat
Identificador de l'autor: 0000-0002-2369-5074
Data d'alta del registre: 2024-02-03
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://www.mdpi.com/2076-3417/10/6/2183
Referència a l'article segons font original: Applied Sciences-Basel. 10 (6):
Referència de l'ítem segons les normes APA: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S (2020). A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology. Applied Sciences-Basel, 10(6), -. DOI: 10.3390/app10062183
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.3390/app10062183
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2020
Tipus de publicació: Journal Publications
Repositori URV