Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

  • Datos identificativos

    Identificador: imarina:9295384
    Handle: https://hdl.handle.net/20.500.11797/imarina9295384
    Autores:
    Fadil, DPassi, VWei, WBen Salk, SZhou, DStrupinski, WLemme, MCZimmer, TPallecchi, EHappy, HFregonese, S
    Resumen:
    This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10 degrees and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

  • Otros:

    Autor según el artículo: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Fadil, Dalal
    Palabras clave: Transistors Mmic Microwave Integrated circuits Graphene Chemical-vapor-deposition Active balun 2d materials
    Resumen: This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10 degrees and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.
    Áreas temáticas: Química Process chemistry and technology Physics, applied Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais Instrumentation General materials science General engineering Fluid flow and transfer processes Engineering, multidisciplinary Engineering (miscellaneous) Engineering (all) Engenharias ii Engenharias i Computer science applications Ciências biológicas iii Ciências biológicas ii Ciências biológicas i Ciências agrárias i Ciência de alimentos Chemistry, multidisciplinary Biodiversidade Astronomia / física
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: dalal.fadil@urv.cat
    Identificador del autor: 0000-0002-2369-5074
    Fecha de alta del registro: 2024-02-03
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Referencia al articulo segun fuente origial: Applied Sciences-Basel. 10 (6):
    Referencia de l'ítem segons les normes APA: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S (2020). A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology. Applied Sciences-Basel, 10(6), -. DOI: 10.3390/app10062183
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2020
    Tipo de publicación: Journal Publications

  • Palabras clave:

    Chemistry, Multidisciplinary,Computer Science Applications,Engineering (Miscellaneous),Engineering, Multidisciplinary,Fluid Flow and Transfer Processes,Instrumentation,Materials Science (Miscellaneous),Materials Science, Multidisciplinary,Physics, Applied,Process Chemistry and Technology
    Transistors
    Mmic
    Microwave
    Integrated circuits
    Graphene
    Chemical-vapor-deposition
    Active balun
    2d materials
    Química
    Process chemistry and technology
    Physics, applied
    Materials science, multidisciplinary
    Materials science (miscellaneous)
    Materials science (all)
    Materiais
    Instrumentation
    General materials science
    General engineering
    Fluid flow and transfer processes
    Engineering, multidisciplinary
    Engineering (miscellaneous)
    Engineering (all)
    Engenharias ii
    Engenharias i
    Computer science applications
    Ciências biológicas iii
    Ciências biológicas ii
    Ciências biológicas i
    Ciências agrárias i
    Ciência de alimentos
    Chemistry, multidisciplinary
    Biodiversidade
    Astronomia / física

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