Autor segons l'article: Jaafar H; Aouaj A; Bouziane A; Iñiguez B
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Threshold voltage Subthreshold swing Short channel effects Parabolic approximation method Dual oxide thickness (dot)
Resum: An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding-gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS.
Àrees temàtiques: Logic Hardware and architecture Electrical and electronic engineering Computer science applications
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2023-09-16
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://ijres.iaescore.com/index.php/IJRES/article/view/19524
Referència a l'article segons font original: International Journal Of Reconfigurable And Embedded Systems. 9 (1): 52-60
Referència de l'ítem segons les normes APA: Jaafar H; Aouaj A; Bouziane A; Iñiguez B (2020). Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET. International Journal Of Reconfigurable And Embedded Systems, 9(1), 52-60. DOI: 10.11591/ijres.v9.i1.pp52-60
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.11591/ijres.v9.i1.pp52-60
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2020
Tipus de publicació: Journal Publications
Repositori URV