Autor según el artículo: Jaafar H; Aouaj A; Bouziane A; Iñiguez B
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin
Palabras clave: Threshold voltage Subthreshold swing Short channel effects Parabolic approximation method Dual oxide thickness (dot)
Resumen: An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding-gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS.
Áreas temáticas: Logic Hardware and architecture Electrical and electronic engineering Computer science applications
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2023-09-16
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://ijres.iaescore.com/index.php/IJRES/article/view/19524
Referencia al articulo segun fuente origial: International Journal Of Reconfigurable And Embedded Systems. 9 (1): 52-60
Referencia de l'ítem segons les normes APA: Jaafar H; Aouaj A; Bouziane A; Iñiguez B (2020). Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET. International Journal Of Reconfigurable And Embedded Systems, 9(1), 52-60. DOI: 10.11591/ijres.v9.i1.pp52-60
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI del artículo: 10.11591/ijres.v9.i1.pp52-60
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2020
Tipo de publicación: Journal Publications