Autor segons l'article: Gonzalez, Benito; Masip, Laia; Lazaro, Marc; Villarino, Ramon; Girbau, David; Lazaro, Antonio
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Girbau Sala, David / Lázaro Guillén, Antonio Ramon / Lázaro Martí, Marc / Villarino Villarino, Ramón Maria
Paraules clau: Capacitance; Circuit simulator; Compact model; Dc characterization; Devic; Electrodes; Electrolytes; Fermi level; Integrated circuit modeling; Logic gates; Organic electrochemical transistor (oect); Peak transconductanc; Peak transconductance; Polymers; Standards; Transconductance; Transistors
Resum: In this article, a compact model of the dc characteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are determined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.
Àrees temàtiques: Astronomia / física; Ciência da computação; Electrical and electronic engineering; Electronic, optical and magnetic materials; Engenharias ii; Engenharias iv; Engineering, electrical & electronic; Interdisciplinar; Materiais; Physics, applied
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: ramon.villarino@urv.cat; david.girbau@urv.cat; antonioramon.lazaro@urv.cat; marc.lazaro@urv.cat; marc.lazaro@urv.cat
Data d'alta del registre: 2025-01-28
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/10706598
Referència a l'article segons font original: Ieee Transactions On Electron Devices. 71 (11): 6983-6988
Referència de l'ítem segons les normes APA: Gonzalez, Benito; Masip, Laia; Lazaro, Marc; Villarino, Ramon; Girbau, David; Lazaro, Antonio (2024). A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs). Ieee Transactions On Electron Devices, 71(11), 6983-6988. DOI: 10.1109/TED.2024.3469170
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI de l'article: 10.1109/TED.2024.3469170
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2024
Tipus de publicació: Journal Publications