Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs)

  • Dades identificatives

    Identificador:  imarina:9388758
    Autors:  González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A
    Resum:
    In this article, a compact model of the dc characteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are determined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.
  • Altres:

    Enllaç font original: https://ieeexplore.ieee.org/document/10706598
    Referència de l'ítem segons les normes APA: González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A (2024). A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs). Ieee Transactions On Electron Devices, 71(11), 6983-6988. DOI: 10.1109/TED.2024.3469170
    Referència a l'article segons font original: Ieee Transactions On Electron Devices. 71 (11): 6983-6988
    DOI de l'article: 10.1109/TED.2024.3469170
    Any de publicació de la revista: 2024-11-01
    Entitat: Universitat Rovira i Virgili
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Data d'alta del registre: 2026-05-09
    Autor/s de la URV: Girbau Sala, David / Lázaro Guillén, Antonio Ramon / Lázaro Martí, Marc / Villarino Villarino, Ramón Maria
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Tipus de publicació: Journal Publications
    Autor segons l'article: González, B; Masip, L; Lázaro, M; Villarino, R; Girbau, D; Lázaro, A
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Àrees temàtiques: Physics, applied, Engineering, electrical & electronic, Engenharias iv, Electronic, optical and magnetic materials, Electrical and electronic engineering, Ciência da computação, Astronomia / física
    Adreça de correu electrònic de l'autor: marc.lazaro@urv.cat, marc.lazaro@urv.cat, marc.lazaro@urv.cat, antonioramon.lazaro@urv.cat, antonioramon.lazaro@urv.cat, david.girbau@urv.cat, david.girbau@urv.cat, ramon.villarino@urv.cat, ramon.villarino@urv.cat
  • Paraules clau:

    Transistors
    Transconductance
    Standards
    Polymers
    Peak transconductance
    Peak transconductanc
    Organic electrochemical transistor (oect)
    Logic gates
    Integrated circuit modeling
    Fermi level
    Electrolytes
    Electrodes
    Devic
    Dc characterization
    Compact model
    Circuit simulator
    Capacitance
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Physics
    Applied
    Engenharias iv
    Ciência da computação
    Astronomia / física
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