Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs)

  • Identification data

    Identifier:  imarina:9388758
    Authors:  Gonzalez, Benito; Masip, Laia; Lazaro, Marc; Villarino, Ramon; Girbau, David; Lazaro, Antonio
    Abstract:
    In this article, a compact model of the dc characteristics of organic electrochemical transistors (OECTs) is proposed. Starting from the output characteristics, the transconductance in the saturation regime is modeled after the output conductance in the saturation regime is reduced to very low values. For this purpose, a previously justified integrable bell-shaped function is used, based on which the transfer characteristics in the saturation regime are determined. Since the drain current due to hopping diminishes in the linear regime, the model is based on the gradual channel approximation and constant hole mobility and gate capacitance at this regime. Six parameters are required for dc modeling, which can be obtained in a straightforward way from the transconductance and transfer characteristics in the saturation regime, and the output characteristics. A good agreement between the modeled and measured data is achieved. The proposed compact model stands out in terms of its simplicity and rapid determination of its parameters and can be easily incorporated into circuit simulators.
  • Others:

    Link to the original source: https://ieeexplore.ieee.org/document/10706598
    APA: Gonzalez, Benito; Masip, Laia; Lazaro, Marc; Villarino, Ramon; Girbau, David; Lazaro, Antonio (2024). A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs). Ieee Transactions On Electron Devices, 71(11), 6983-6988. DOI: 10.1109/TED.2024.3469170
    Paper original source: Ieee Transactions On Electron Devices. 71 (11): 6983-6988
    Article's DOI: 10.1109/TED.2024.3469170
    Journal publication year: 2024
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/publishedVersion
    Record's date: 2025-01-28
    URV's Author/s: Girbau Sala, David / Lázaro Guillén, Antonio Ramon / Lázaro Martí, Marc / Villarino Villarino, Ramón Maria
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Journal Publications
    Author, as appears in the article.: Gonzalez, Benito; Masip, Laia; Lazaro, Marc; Villarino, Ramon; Girbau, David; Lazaro, Antonio
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Thematic Areas: Astronomia / física, Ciência da computação, Electrical and electronic engineering, Electronic, optical and magnetic materials, Engenharias ii, Engenharias iv, Engineering, electrical & electronic, Interdisciplinar, Materiais, Physics, applied
    Author's mail: ramon.villarino@urv.cat, david.girbau@urv.cat, antonioramon.lazaro@urv.cat, marc.lazaro@urv.cat, marc.lazaro@urv.cat
  • Keywords:

    Capacitance
    Circuit simulator
    Compact model
    Dc characterization
    Devic
    Electrodes
    Electrolytes
    Fermi level
    Integrated circuit modeling
    Logic gates
    Organic electrochemical transistor (oect)
    Peak transconductanc
    Peak transconductance
    Polymers
    Standards
    Transconductance
    Transistors
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Physics
    Applied
    Astronomia / física
    Ciência da computação
    Engenharias ii
    Engenharias iv
    Interdisciplinar
    Materiais
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